A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

In this letter, a polycrystalline silicon thin–film transistor consisting of silicon–oxide–nitride–oxide–silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage $(V_{\rm th})$, and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

Publication:

IEEE Electron Device Letters

Pub Date:

2007

DOI:

10.1109/LED.2007.903885

Bibcode:

2007IEDL...28..809C

Keywords:

Nanowire (NW);
nonvolatile memory;
polysilicon (poly-Si);
silicon-oxide-nitride-oxide-silicon (SONOS);
thin-film transistor (TFT)

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A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

Abstract