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The combination of performance and value
the wireless industry requires.
1.8 Volt Intel StrataFlash® Wireless Memory (L18/L30) delivers the combination of wireless performance and Intel StrataFlash memory value that today's wireless handset developers require. L18/L30 is the world's first 1.8 V Multi-Level Cell (MLC) device, and it offers wireless designers the unique combination of memory features needed for today's rich wireless applications—high performance, high density, and low-power operation. Delivered on Intel's 4th generation of MLC technology and 0.13 µm process lithography, the L18/L30 enables highly reliable, high performance, yet cost-effective wireless solutions. L18/L30 gives wireless products the capacity to do more while consuming less power in the process.
The L18/L30 continues Intel's tradition of wireless performance with these features from the W18:
Read-While-Write/Erase Operation (RWW/E): Next-generation cellular and wireless applications are incorporating more data features such as Internet browsing, data streaming, and text messaging. These types of system requirements are much more data intensive and require the higher throughput rates that are achieved with a RWW/E flash memory device.
Flexible-partition operation allows the processor to execute out of one partition and simultaneously write or erase in another partition. This feature improves the speed that information can be stored and accessed in the flash memory by up to 40 percent.
1.8 V Operation: Full 1.8 V operation allows the L18/L30 device to RWW/E over the entire 1.8 V EIA/JEDEC voltage range. The 1.8 V low-voltage operation supports 1.8 V logic, which produces energy savings of up to 60 percent. These energy savings result in reduced power consumption, extending the battery life.
This device is available in both a 1.8 V I/O (L18) and 3 V I/O (L30), making it the complete solution for both 1.8 V and 3 V applications.
Burst and Page Modes: The synchronous-burst mode and asynchronous-page mode read operations accelerate cell phone memory subsystems to the next level of performance. Memory bottlenecks are removed by accessing the flash memory contents with asynchronous page and synchronous burst reads. These fast reads allow for direct execution with zero wait-states at 54 MHz bus speed in 1.8 V systems.
Along with wireless performance, the L18/L30 delivers the value of Intel StrataFlash Memory technology. By storing two bits of information in each memory cell instead of just one, Intel StrataFlash Memory technology allows twice the information to be stored in the same space, resulting in great value. Available in densities of in 64 Mb, 128 Mb, and 256 Mb for discrete devices, and stackable to 1 Gb, this new wireless flash memory from Intel allows wireless designers to increase the richness of features in their wireless designs at an attractive cost.
Today's wireless devices demand higher memory throughput for more advanced features, such as Internet browsing, e-mail, data streaming, and text messaging. 1.8 V Intel StrataFlash Wireless Memory (L18/L30), with dual-mode RWW/E operation and low 1.8 V operation, provides the performance needed for these advanced features, and the value of MLC technology in a single flash memory device.
Levels Above. Generations Ahead.
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First 1.8 Volt MLC device on 0.13 µm process lithography |
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Intel's 4th-generation MLC architecture offers highly reliable operation |
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64-Mb, 128-Mb, and 256-Mb high-density devices |
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Flexible 8 Mb and partitioning allows optimized memory usage |
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Dual-mode RWW/E operation for high data throughput |
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Burst and page mode support for 54 MHz bus speed allows fast code execution
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| Features |
Benefits |
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Low-voltage 1.8 V |
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Ideal for next-generation cellular/wireless handsets running on a battery |
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Burst and page mode interface |
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Fast code execution (54 MHz bus speed with zero wait-states) |
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Flexible multi-partition architecture
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8 Mb partitions allow for changing code and data requirements |
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Higher data throughput for more data-intensive cellular/wireless handset applicationss |
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Execute code and write or erase data simultaneously |
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Intel® MLC Technology |
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Great value and fourth generation of proven reliability
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64-Mb, 128-Mb and 256-Mb densities—stackable to 1 Gb |
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Industry-leading, highest density NOR flash
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VF BGA package and Intel® Stacked-CSP |
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Small packaging for wireless applications
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Complete selection of Intel® Flash management software |
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Dramatically reduces the time-to-market for OEMs and is easily ported to OEMs' environment |
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Manage code execution and data maintenance in one device |
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Common Flash Interface (CFI) |
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Compatibility with future products today
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One-Time-Programmable protection |
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Registers 64 bits programmed at the factory with a unique ID, and 2K bits can be programmed by the OEM; traceability, license control, and system authentication
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Buffered Enhanced Factory Programming (BEFP) |
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BEFP speeds up MLC flash programming up to 80 percent for today's beat-rate sensitive manufacturing environments
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251890-001
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